PART |
Description |
Maker |
M470L3224BT0 M470L3224BTO |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet 256MB DDR SDRAM MODULE
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM - 256Mb 64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 |
16M X 16 DDR DRAM, PBGA144 Specialty DRAMs - 256M (8Mx32) 200MHz Specialty DRAMs - 256M (16Mx16) 200MHz Specialty DRAMs - 256M (16Mx16) 250MHz
|
INFINEON TECHNOLOGIES AG
|
HYB18T256400AC-3.7 HYB18T256400AC-5 HYB18T256160AC |
DDR2 SDRAM Components - 256Mb (64Mx4) DDR2 533 (4-4-4) Available 3Q04 DDR2 SDRAM Components - 256Mb (64Mx4) DDR2 400 (3-3-3) Available 3Q04 DDR2 SDRAM Components - 256Mb (16Mx16) DDR2 533 (4-4-4) Available 3Q04 DDR2 SDRAM Components - 256Mb (16Mx16) DDR2 400 (3-3-3) Available 3Q04 DDR2 SDRAM Components - 256Mb (32Mx8) DDR2 533 (4-4-4) Available 3Q04 DDR2 SDRAM Components - 256Mb (32Mx8) DDR2 400 (3-3-3) Available 3Q04
|
Infineon
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HY5DU561622ALT HY5DU561622ALT-H HY5DU561622ALT-J H |
DDR SDRAM - 256Mb 256M-S DDR SDRAM 256M(32Mx8) DDR Sdram
|
Hynix Semiconductor
|
M368L1624DTL-C_LB3 M368L1624DTL M368L1624DTL-C_LA2 |
From old datasheet system 16Mx64 DDR SDRAM 184pin DIMM based on 16Mx16 16Mx64 DDR SDRAM84Pin DIMM插槽基础6Mx16显示
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HDD64M72D18RW-13A HDD64M72D18RPW HDD64M72D18RWP-10 |
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块512Mbyte4Mx72bit),2Mx8BanksK的参考依据。,184Pin与锁相环内存 DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块512Mbyte64Mx72bit),2Mx8BanksK的参考依据。,184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
HDD32M64F8 HDD32M64F8-13A HDD32M64F8-13B HDD32M64F |
DDR SDRAM Module 256Mbyte (32Mx64bit), based on 32Mx8, 4Banks, 8K Ref., SMM,
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
HYMD232726B8J-J HYMD232726B8J-D43 HYMD232726B8JD4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
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HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM 64M X 4 DDR DRAM, PBGA60 16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
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